Direct Observation of Excitonic Rabi Oscillations in Semiconductors
- 15 March 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 82 (11), 2346-2349
- https://doi.org/10.1103/physrevlett.82.2346
Abstract
We observe multiple excitonic optical Rabi oscillations in a semiconductor quantum well. Up to eight oscillation periods of the heavy-hole exciton density on a subpicosecond time scale are observed. An approximate linear dependence of the oscillation frequency on the light field amplitude is established. The experiment is based on a two-color detection scheme which allows for the observation of the heavy-hole exciton density via transmission changes at the light-hole exciton. The observations are in good agreement with theoretical computations based on multiband semiconductor Bloch equations.Keywords
This publication has 15 references indexed in Scilit:
- Self-Induced Transmission on a Free Exciton Resonance in a SemiconductorPhysical Review Letters, 1998
- Theoretical study of solitonlike propagation of picosecond light pulses interacting with Wannier excitonsPhysical Review E, 1998
- Ultrafast Spectroscopy of Semiconductors and Semiconductor NanostructuresPublished by Springer Nature ,1996
- Rabi Flopping in SemiconductorsPhysical Review Letters, 1994
- Selective Excitation of Dressed Atomic States by Use of Phase-Controlled Optical FieldsPhysical Review Letters, 1985
- Incoherent Resonance Fluorescence from a Rb Atomic Beam Excited by a Short Coherent Optical PulsePhysical Review A, 1973
- Observation of Optical Nutation in an Active MediumPhysical Review Letters, 1970
- Observation of the Optical Transient Nutation EffectPhysical Review Letters, 1968
- The Molecular Beam Resonance Method for Measuring Nuclear Magnetic Moments. The Magnetic Moments of,andPhysical Review B, 1939
- Space Quantization in a Gyrating Magnetic FieldPhysical Review B, 1937