Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low Temperatures
- 1 November 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (11), 2223-2226
- https://doi.org/10.1143/jpsj.16.2223
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Electrical Properties of Titanium Dioxide SemiconductorsPhysical Review B, 1953
- Electrical and Optical Properties of Rutile Single CrystalsPhysical Review B, 1952
- Interaction between Electrons and Ions in Semiconductors. IJournal of the Physics Society Japan, 1948