Effects of composition profile on characteristics of GaAs–Ga1−xAlxAs double-heterostructure lasers
- 1 June 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (6), 2688-2689
- https://doi.org/10.1063/1.1662634
Abstract
Electron probe x‐ray microanalysis was used to measure the composition profile in the active layers of GaAs–Ga1−x Al x As double‐heterostructure wafers along the growth direction. The threshold current density and the lasing wavelength of the double‐heterostructure laser were found to be consistently affected by the composition profile in the active layer.Keywords
This publication has 3 references indexed in Scilit:
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971