Electronic Basis of Switching in Amorphous Semiconductor Alloys

Abstract

Reversible threshold switching in the amorphous covalent alloys is explained by the carrier transport and recombination properties of the "relaxation semiconductor," defined by dielectric relaxation time greater than recombination time. In these alloys, the recombination after single free paths pins the Fermi level at the location for minimum conductivity. Characteristic "recombinative injection" of minority electrons is the final process in the switching, and it accounts for observed behavior in its various aspects.