Disordering of Ga0.47In0.53As/InP multiple quantum well layers by sulphur diffusion

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Abstract
The disordering of Ga0.47In0.53As/InP MQW layers by the diffusion of sulphur is reported for the first time. Photoluminescence measurements indicate that this results in a larger bandgap material. SIMS profiles show that intermixing of both group III and V elements occurs between wells and barriers.