Capture cross section and trap concentration of holes in silicon dioxide
- 1 March 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (3), 1079-1081
- https://doi.org/10.1063/1.322729
Abstract
Hole trapping in thermally grown silicon‐dioxide films has been studied using optically induced hot‐hole injection in p‐channel polysilicon‐SiO2‐silicon field‐effect‐transistor structures. Analysis of the data assuming a uniform trap distribution and no detrapping gives 3.1×10−13 cm2 and 1.4×1018 cm−3 for the capture cross section and the trap concentration, respectively. Initial hole‐trapping efficiency is almost 99% for a 1000‐Å SiO2 film.Keywords
This publication has 13 references indexed in Scilit:
- Hole injection and transport in SiO2 films on SiApplied Physics Letters, 1975
- Electron trapping at positively charged centers in SiO2Applied Physics Letters, 1975
- Optically induced injection of hot electrons into SiO2Journal of Applied Physics, 1974
- Hole and electron transport in SiO2 filmsJournal of Applied Physics, 1974
- Hole Currents in Thermally Grown SiO2Journal of Applied Physics, 1972
- Photoemission Measurements of the Valence Levels of Amorphous SiPhysical Review Letters, 1971
- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- Photoemission of Holes from Silicon into Silicon DioxidePhysical Review B, 1966