A microwave evaluation of the velocity-field characteristic in different regions of individual epitaxial gallium-arsenide layers

1 July 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 57 (7), 1299-1301
https://doi.org/10.1109/PROC.1969.7239

Abstract

The velocity (current)-electric field characteristic has been measured in different regions of individual epitaxial gallium-arsenide wafers by a high-power microwave technique. Epitaxial-n layers on semi-insulating substrates ranging in resistivity from approximately 0.5 to 5 Ω cm have been characterized. Trends in high-field microwave properties with normally specified low-field dc material properties are indicated.

Keywords

GALLIUM ARSENIDE
FREQUENCY
MAGNETIC FIELD MEASUREMENT
INSERTION LOSS
BONDING
DELAY EFFECTS
CURRENT MEASUREMENT
MATERIAL PROPERTIES
MAGNETIC MATERIALS
POLARIZATION

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