Silicon Surface Barrier Detectors with High Reverse Breakdown Voltages

Abstract

Surface barrier detectors with essentially no dead layer and with depleted depths up to 1.5 mnm have been achieved by the combination of an inverted edge and a guard ring. The ability of these devices to withstand high reverse bias voltages insures rapid collection of the charge carriers and consequently fast rising pulses even for thick depletion regions. The energy resolution was 9.2 kev for 1-Mev electrons and was 7.5 kev fwhm at 285°K for 0.6-Mev electrons.