The pearson IV distribution and its application to ion implanted depth profiles
- 1 January 1980
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 46 (3-4), 141-147
- https://doi.org/10.1080/00337578008209163
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Calculations of implanted-ion range and energy-deposition distributions:11B in SiRadiation Effects, 1976
- Ion Implantation Range and Energy Deposition DistributionsPublished by Springer Nature ,1975