Multilayer structure for epitaxial growth of oxide films on Si with an underlying electrode
- 24 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (21), 2625-2627
- https://doi.org/10.1063/1.109266
Abstract
Multilayers of CaF2 , Pd, and Pt were epitaxially grown on HF treated (100)Si by sequential deposition of the desired materials in ultrahigh vacuum. This structure is suitable for epitaxial growth of oxide films on Si with an underlying electrode. The epitaxial layer CaF2 effectively acts as a barrier to impede metal-substrate reaction, and the metal bilayer Pd/Pt forms an epitaxial electrode with good adhesion to the underlying substrate and high resistance to oxidation. KNbO3 deposited on this multilayer structure showed epitaxial growth in a mixed (001)/(110) orientation.Keywords
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