Abstract
Copper wires were cold worked at room temperature to approximately a 15% reduction in area and were then irradiated at temperatures between 100° and 150°C with 1.25‐Mev electrons. The residual resistivity was observed to decrease as a function of exposure at temperatures above 100°C. The higher the temperature at which the irradiation was performed, the greater was the rate of resistivity decrease. From these data, it is concluded that one of the primary defects produced by electron irradiation becomes mobile in the temperature range, 100°–150°C. It is suggested that interstitials and vacancies produced by the irradiation initiate a process which results in the annihilation of dislocations. From an analysis of the temperature dependence of the rate of decrease, a value for the activation energy for vacancy migration in copper has been deduced: 1.28±0.10 ev.