The DX centre
- 1 October 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (10B), B23-B26
- https://doi.org/10.1088/0268-1242/6/10b/004
Abstract
A new model for DX centres is proposed and shown to be the only model which agrees with DLTS, metastability and ballistic phonon scattering experiments. In this model an As antisite complex, formed from a substitutional donor by the exchange of two adjacent atoms, binds two electrons. Furthermore, if these electrons are assumed to occupy a triplet spin state, the model can explain the paramagnetic susceptibility reported for filled DX centres. The stability of such a configuration could be due to the unusual properties of the antisite complex. Extension of this analysis to the related EL2 defect in GaAs suggests that the normal EL2 state may be 3T2(A2) and the metastability of the excited state due, in part, to spin conservation.Keywords
This publication has 16 references indexed in Scilit:
- Analysis of the vacancy-interstitial model ofDX centersJournal of Electronic Materials, 1991
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified ConfigurationJapanese Journal of Applied Physics, 1989
- Electron-paramagnetic-resonance measurements of Si-donor-related levels in AsPhysical Review B, 1989
- The Vacancy-Interstitial Model of DX CentersMaterials Science Forum, 1989
- Effect of local alloy disorder on emission kinetics of deep donors (D X centers) in AlxGa1−xAs of low Al contentApplied Physics Letters, 1988
- Native defects in gallium arsenideJournal of Applied Physics, 1988
- Theory of the Atomic and Electronic Structure ofCenters in GaAs andAlloysPhysical Review Letters, 1988
- Symmetry of Donor-Related Centers Responsible for Persistent Photoconductivity inPhysical Review Letters, 1979
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975