Stress Dependence of Photoluminescence in GaAs

Abstract

Photoluminescence in GaAs at $k=0\mathrm{}$ under uniaxial stress up to 14 000 kg/${\mathrm{cm}}^2$ is studied at 2°K. The stress dependence of the coupling between $J=\frac{3}{2}$, $m_j=\pm \frac{1}{2}$ and $J=\frac{1}{2}$, $m_j=\pm \frac{1}{2}$ valence bands is observed. The deformation-potential constants for the valence band and for the acceptor ground state are determined, and the values for the valence band are $a=-8.9\mathrm{}$ eV, $b=-1.96\mathrm{}$ eV, and $d=-5.4\mathrm{}$ eV.