Low Temperature Characteristics of Ion Implanted Silicon Position Sensitive Detectors
- 1 January 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 21 (1), 75-84
- https://doi.org/10.1109/tns.1974.4327447
Abstract
The operation of ion implanted silicon position sensitive detectors at low temperatures will be described. The improved noise performance of the detector at these temperatures in both the energy and position modes will be analyzed and its implications on low energy applications will be discussed. A large part of the investigation was devoted to the study of boron implanted resistors and their noise properties both at room temperature and cryogenic temperatures.Keywords
This publication has 15 references indexed in Scilit:
- Si(Li) position sensitive detectorNuclear Instruments and Methods, 1973
- Buried-guarded layer ion-implanted resistorsIEEE Transactions on Electron Devices, 1973
- New Techniques for Improving High Value Ion Implanted ResistorsPublished by Springer Nature ,1971
- X-ray image dissection using a channel multiplier arrayNuclear Instruments and Methods, 1970
- One and Two Dimensional Position Sensing Semiconductor DetectorsIEEE Transactions on Nuclear Science, 1968
- Position-Sensitive Semiconductor Particle Detectors Fabricated by Ion ImplantationIEEE Transactions on Nuclear Science, 1968
- On the ballistic deficit and the signal-to-noise ratio of semiconductor spectrometers for energy and position spectroscopyNuclear Instruments and Methods, 1968
- On the charge dividing mechanism in position sensitive detectorsNuclear Instruments and Methods, 1967
- A position sensitive Geiger counterNuclear Instruments and Methods, 1967
- Grenzschichtzaehler fuer orts- und energiebestimmungNuclear Instruments and Methods, 1963