Physics of a-Si:H p-i-n devices
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 643-652
- https://doi.org/10.1016/0022-3093(93)91082-e
Abstract
No abstract availableFunding Information
- National Institutes of Health
- National Renewable Energy Laboratory
This publication has 12 references indexed in Scilit:
- Analysis of double injection transients in amorphous silicon p-i-n diodesJournal of Applied Physics, 1992
- Current-induced defect creation and recovery in hydrogenated amorphous siliconApplied Physics Letters, 1991
- Long-time transient conduction in a-Si:H p?i?n devicesPhilosophical Magazine Part B, 1991
- Saturation and recovery kinetics of current-induced defects in a-Si:HJournal of Non-Crystalline Solids, 1991
- Thermal generation currents in hydrogenated amorphous silicon p-i-n structuresApplied Physics Letters, 1990
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Reinterpretation of degradation kinetics of amorphous siliconApplied Physics Letters, 1989
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Measurements of depletion layers in hydrogenated amorphous siliconPhysical Review B, 1983
- Silicide formation in Pd-a-Si:H Schottky barriersApplied Physics Letters, 1981