Dependence on Ce Concentration of Blue Emission and Crystallographic Properties in SrGa2S4:Ce Electroluminescent Thin Films Grown by Molecular Beam Epitaxy
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6R)
- https://doi.org/10.1143/jjap.36.3517
Abstract
The Ce-doping dependence of blue emission properties has been investigated for SrGa2S4:Ce electroluminescent (EL) thin films grown by molecular beam epitaxy (MBE). EL spectra, EL luminance, photoluminescence (PL) spectra, X-ray diffraction (XRD) intensity, XRD rocking curves, spacing of lattice planes, EL and PL decay times were measured in samples with Ce-doping concentrations ranging from 0.87 mol% to 8.37 mol%. EL luminance reached a maximum at 2.40 mol%. In particular, EL chromaticity remained within the pure blue region even with higher Ce-doping concentrations.Keywords
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