Excitonic Absorption Spectra of GaAs–AlAs Superlattice at High Temperature
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A), L795
- https://doi.org/10.1143/jjap.23.l795
Abstract
Optical absorption spectra of MBE grown GaAs–AlAs superlattices with various thickness of the potential-well layer were measured in the temperature range up to 500 K. The excitonic absorption peak is observed even at a temperature of 500 K or higher. The broadening parameter \varGamma for the exciton peak was determined by a curve fitting. This parameter determines the temperature limit below which double absorption peaks due to heavy and light hole exciton are observed.Keywords
This publication has 6 references indexed in Scilit:
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalonApplied Physics Letters, 1982
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength RegionJapanese Journal of Applied Physics, 1981
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton AbsorptionJournal of the Physics Society Japan, 1966