Characterization of GaAs devices by a versatile pulsed I-V measurement system
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 35, 1137-1140
- https://doi.org/10.1109/mwsym.1990.99780
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- RF Nonlinear Device Characterization Yields Improved Modeling AccuracyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- On-wafer large signal pulsed measurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new approach to the RF power operation of MESFETsIEEE Transactions on Microwave Theory and Techniques, 1989
- Nonlinear GaAs MESFET modeling using pulsed gate measurementsIEEE Transactions on Microwave Theory and Techniques, 1988
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988
- Narrow pulse measurement of drain characteristics of GaAs MESFETsElectronics Letters, 1987
- The role of the device surface in the high voltage behaviour of the GaAs MESFETSolid-State Electronics, 1986
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- Computer Calculation of Large-Signal GaAs FET Amplifier CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1985