Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb/InAs superlattices
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2), 888-891
- https://doi.org/10.1116/1.586144