InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 [micro sign]m
- 1 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (4), 222-223
- https://doi.org/10.1049/el:20010173
Abstract
Microdisk lasers are fabricated in an InP/InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 µm is reported.Keywords
This publication has 3 references indexed in Scilit:
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- Two-Dimensional Photonic Band-Gap Defect Mode LaserScience, 1999
- Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasersElectronics Letters, 1998