Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7R)
- https://doi.org/10.1143/jjap.30.1447
Abstract
Properties of titanium nitride (TiN) films deposited by reactive sputtering and dc magnetron sputtering from composite target are studied. In the as-deposited films, a TiN (200) grain, which is the lowest energy grain and is dominant in bulk TiN, is grown in films from composite target. A resistivity of 44 µΩ-cm is attained. These results show that high quality TiN films can be deposited by dc magnetron sputtering employed TiN composite target. However, a TiN (111) grain is grown in TiN films by the nitridation of Ti. Nitridation of a reactively sputtered TiN film in ammonium is also studied. The TiN films deposited from composite target and formed by the nitridation of titanium show good barrier performance in Al-Si/TiN/Si Ohmic contact.Keywords
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