Ion-implant compensation of tensile stress in Tungsten absorber for low distortion X-ray masks
- 31 December 1986
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 5 (1-4), 51-59
- https://doi.org/10.1016/0167-9317(86)90029-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Response of lithographic mask structures of intense repetitively pulsed x rays: Thermal stress analysisJournal of Applied Physics, 1985
- Reactive-ion etching of 0.2 μm period gratings in tungsten and molybdenum using CBrF3Journal of Vacuum Science & Technology B, 1985
- Stress in ion-implanted CVD Si3N4 filmsJournal of Applied Physics, 1977
- Tungsten metallization for LSI applicationsJournal of Vacuum Science and Technology, 1974
- Determination of Stress in Films on Single Crystalline Silicon SubstratesReview of Scientific Instruments, 1965