Anomalous Transverse Magnetoresistance of InSb Films

Abstract

The room‐temperature Corbino magnetoresistance (ΔR/R₀)_c of electron beam zone‐recrystallized n‐type InSb films tends toward saturation in magnetic fields greater than 3 kOe. This fact as well as the presence of a large magnetoresistance (Δρ/ρ₀)_P observed on long rectangular specimens (l/w>3) are interpreted in terms of a surface layer having a higher impurity concentration and lower electron mobility than the rest of the film. The experimental observations on zone‐recrystallized as well as dendritic InSb films is shown to be consistent with a model of two superposed layers, one with surface‐like and the other with bulk‐like electrical and galvanomagnetic properties.