Low voltage power devices for future VRM
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 395-398
- https://doi.org/10.1109/ispsd.1998.702727
Abstract
In this paper, a fully depleted LDD MOSFET built on silicon-on-oxide is proposed as a candidate device for future voltage regulator modules (VRM), which are dedicated DC/DC converters to power advanced microprocessors, and which are expected to work at multi-megahertz frequencies.Keywords
This publication has 2 references indexed in Scilit:
- A performance comparison between new reduced surface drain "RSD" LDMOS and RESURF and conventional planar power devices rated at 20 VPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fully depleted 30-V-class thin-film SOI power MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002