Abstract
The background of thermal carriers is included in a theory for helical instabilities in electron-hole plasmas. An important quantity in determining the stability criteria and frequency of the instability is the injection level. The theory applies to any injection level in n-type, p-type, and intrinsic semiconductors and to insulators. Comparison with Ancker-Johnson's experiment in pInSb strongly supports the helical instability as the basic mechanism in the oscillistor. Experiments with different types of material should, according to the theory, give markedly different results. When the temperature dependence of the mobilities is known the plasma temperature can be determined from the electric field at the onset of instability.

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