B6HF: A 0.8 micron 25GHz/25ps bipolar technology for "Mobile radio" and "Ultra fast data link" IC-products
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 0.8 micron bipolar technology is presented featuring >25 GHz cutoff-frequency at VBC = 0 and 25 ps at 1.2 mA and 70 ps at 100 /spl mu/A CML gate-delay times. Numerous additional devices are offered to allow for a broad variety of competitive applications ranging from telecom to consumer IC products realized by either fullcustom or semicustom design style.Keywords
This publication has 2 references indexed in Scilit:
- An SOI-based high performance self-aligned bipolar technology featuring 20 ps gate-delay and a 8.6 fj power-delay product.Published by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- A high performance BiCMOS process featuring 40 GHz/21 psPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992