Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
- 31 October 2005
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 49 (10), 1632-1638
- https://doi.org/10.1016/j.sse.2005.08.014
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN SubstratesElectrochemical and Solid-State Letters, 2004
- High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substratephysica status solidi (a), 2003
- Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphireJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- An insulator-lined silicon substrate-via technology with high aspect ratioIEEE Transactions on Electron Devices, 2001
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSBIEEE Transactions on Electron Devices, 2001
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphireApplied Physics Letters, 2000
- Self-heating in high-power AlGaN-GaN HFETsIEEE Electron Device Letters, 1998
- High Al-content AlGaN/GaN MODFETs for ultrahigh performanceIEEE Electron Device Letters, 1998
- High power AlGaN/GaN HEMTs for microwave applicationsSolid-State Electronics, 1997