Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline silicon
- 23 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (4), 403-405
- https://doi.org/10.1063/1.103649
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma StreamJapanese Journal of Applied Physics, 1986
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Microwave Plasma EtchingJapanese Journal of Applied Physics, 1977