Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous silicon
- 30 September 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (11), 1199-1202
- https://doi.org/10.1016/0038-1098(81)91113-3
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- States in the gap in non-crystalline semiconductorsJournal of Physics C: Solid State Physics, 1980
- Gap states in hydrogenated amorphous silicon: A comparison of photoemission and photoconductivity resultsSolid State Communications, 1980
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Band-Tail Absorption in Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- Characterization of high gap state densitites in heavily hydrogenated a-SiJournal of Non-Crystalline Solids, 1980
- The electronic structure of impurities and other point defects in semiconductorsReviews of Modern Physics, 1978
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Weak Absorption Tails in Amorphous SemiconductorsPhysical Review B, 1972
- Spectral Distribution of PhotoconductivityPhysical Review B, 1956