Inversion layer mobility under high normal field in nitrided-oxide MOSFETs
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (9), 2058-2069
- https://doi.org/10.1109/16.57169
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processingIEEE Electron Device Letters, 1989
- Charge-trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealingIEEE Transactions on Electron Devices, 1988
- Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devicesIEEE Transactions on Electron Devices, 1988
- Ultra-thin re-oxidized nitrided-oxides prepared by rapid thermal processingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A kinetic model for the thermal nitridation of SiO2/SiJournal of Applied Physics, 1986
- Stress in silicon at Si3N4/SiO2 film edges and viscoelastic behavior of SiO2 filmsJournal of Applied Physics, 1985
- On the role of scattering by surface roughness in silicon inversion layersSurface Science, 1973
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954