Optical properties of doped InGaN/GaN multiquantum-well structures
- 31 May 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (22), 3299-3301
- https://doi.org/10.1063/1.123324
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodesApplied Physics Letters, 1998
- Luminescence spectra from InGaN multiquantum wells heavily doped with SiApplied Physics Letters, 1998
- Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substratesApplied Physics Letters, 1998
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Thermodynamic analysis of the MOVPE growth of In Ga1−NJournal of Crystal Growth, 1997
- Optical Properties of Ingan/GaN Multi Quantum Well StructuresMRS Proceedings, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986