Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm

1 January 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (9), 318-320
https://doi.org/10.1049/el:19810225

Abstract

Single-mode, CW ridge lasers at 1.3 μm have been made with threshold currents as low as 125 mA at 25°C using a symmetrical wafer structure. Performance is interpreted in terms of ridge guiding and injected carrier antiguiding.

Keywords

SYMMETRICAL WAFER STRUCTURE
RIDGE WAVEGUIDE LASER
1.3 MICRONS
SEMICONDUCTOR JUNCTION LASER
RIDGE GUIDING
INJECTED CARRIER ANTIGUIDING
INGAASP

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