Interdiffusion in doped and undoped semiconductor alloys HgwCd1−wTe
- 16 September 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 67 (1), 183-192
- https://doi.org/10.1002/pssa.2210670118
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The defect structure of CdTeRevue de Physique Appliquée, 1977
- Self-compensation in CdTe and ZnTe crystals grown from indium solventsPhysica Status Solidi (a), 1976
- Defects in pure and halogen compensated cadmium telluride grown by the THM methodJournal of Physics and Chemistry of Solids, 1976
- The defect structure of CdTe: Self-diffusion dataJournal of Solid State Chemistry, 1975
- The defect structure of CdTe: Hall dataJournal of Solid State Chemistry, 1975
- The relative magnitude of the diffusion constants of cadmium vacancies and indium–cadmium vacancy pairs in CdS and CdTePhysica Status Solidi (a), 1974
- Temperature Dependence of the HgTe Band GapPhysical Review B, 1973
- Vapor-crystal equilibrium and electrical properties of HgTeJournal of Physics and Chemistry of Solids, 1970
- A general simplification and improvement of the matano-boltzmann method in the determination of the interdiffusion coefficients in binary systemsScripta Metallurgica, 1969
- Band structure of HgTe-In 2 Te 3 alloysBritish Journal of Applied Physics, 1965