Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition
- 1 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (4), 717-724
- https://doi.org/10.1016/0022-0248(90)90836-a
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsApplied Physics Letters, 1988
- Selective growth of GaAs in the MOMBE and MOCVD systemsJournal of Crystal Growth, 1986
- Preparation of GaAs and Ga1-xAlxAs Multi-Layer Structures by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- High temperature growth rate in MOCVD growth of AlGaAsJournal of Crystal Growth, 1984
- Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devicesJournal of Crystal Growth, 1984
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVDJapanese Journal of Applied Physics, 1984
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- Investigations on low temperature mo-cvd growth of GaAsJournal of Electronic Materials, 1983
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981
- An Examination of the Product Catalyzed Reaction of Trimethylgallium with Phosphine and the Mechanism of the Chemical Vapor Deposition of Gallium Phosphide and Gallium ArsenideJournal of the Electrochemical Society, 1977