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Study of molecular-beam epitaxy GaAs1−
x
Sb
x
(
x
<0.76) grown on GaAs(100)
Home
Publications
Study of molecular-beam epitaxy GaAs1−
x
Sb
x
(
x
<0.76) grown on GaAs(100)
Study of molecular-beam epitaxy GaAs1−
x
Sb
x
(
x
<0.76) grown on GaAs(100)
JZ
J. H. Zhao
J. H. Zhao
AL
A. Z. Li
A. Z. Li
JJ
J. Jeong
J. Jeong
DW
D. Wong
D. Wong
JL
J. C. Lee
J. C. Lee
MM
M. L. Milliman
M. L. Milliman
TS
T. E. Schlesinger
T. E. Schlesinger
AM
A. G. Milnes
A. G. Milnes
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1 March 1988
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 6
(2)
,
627-630
https://doi.org/10.1116/1.584417
Abstract
No abstract available
Cited by 14 articles