The influence of LPE growth techniques on the alloy composition of InGaAsP
- 15 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (4), 292-295
- https://doi.org/10.1063/1.90764
Abstract
In experiments on the LPE growth of InGaAsP on (100) ‐InP substrates, it has been found that constant‐composition epitaxial layers can be grown at constant temperature using the step‐cooling technique, while the equilibrium‐cooling, supercooling, and two‐phase‐solution techniques which involve growth under changing temperatures all result in grading of the alloy composition. The lattice constants and energy gaps of epitaxial layers grown using the step‐cooling technique are independent of the amount of step cooling but are dependent on the growth temperature.Keywords
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