MoO3 Electron Resist and Its Application to Fabrication of Mo Fine Pattern
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A), L574
- https://doi.org/10.1143/jjap.25.l574
Abstract
Amorphous MoO3 films become insoluble in pure water after electron irradiation and can be used as negative-type electron resists. A fine pattern with a resolution of the order of 0.5 µm is easily generated. A fine pattern of the metallic Mo is also fabricated by the reduction treatment of the MoO3. pattern in an H2 atmosphere above 500°C. The minimum electrical resistivity of the reduced Mo is 7.4×10-5 Ω·cm, which is obtained by the reduction treatment at 850°C.Keywords
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