Optical Measurement of Compensation in Highly Doped Silicon
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 23 (1), 295-299
- https://doi.org/10.1002/pssb.19670230129
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium TemperaturesPhysical Review B, 1966
- Recombinaison radiative dans le germanium fortement dopé et compenséPhysica Status Solidi (b), 1965
- Analysis of intrinsic recombination radiation from silicon and germaniumJournal of Physics and Chemistry of Solids, 1959
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952