Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane
- 7 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (23), 1922-1924
- https://doi.org/10.1063/1.98301
Abstract
Epitaxial growth of phosphorus‐doped silicon deposited at 250 °C from a radio‐frequency glow discharge from SiH4 is demonstrated by high‐resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si substrates and hydrogenated amorphous silicon. After recrystallization at 700 °C, single‐crystal layers are obtained, in which HREM reveals extensive twinning. The fact that epitaxial growth can take place at 250 °C in a system with a background pressure of only 5×10−6 mbar can be attributed to the presence of species in the SiH4 plasma that reduce the native oxide and the use of HF in the cleaning procedure.Keywords
This publication has 3 references indexed in Scilit:
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- Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °CApplied Physics Letters, 1986
- Interaction of H 2 O with Si(111) and (100): Critical Conditions for the Growth ofJournal of the Electrochemical Society, 1984