On a new method for measuring the charge carriers drift mobility in high resistivity silicon
- 1 July 1965
- journal article
- Published by Elsevier BV in Physics Letters
- Vol. 17 (2), 102
- https://doi.org/10.1016/0031-9163(65)90254-4
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953