Submicron-resolution eutectic thin-film mask
- 15 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (12), 1098-1100
- https://doi.org/10.1063/1.91886
Abstract
A process for fabrication of submicron periodic arrays uses a directionally solidified eutectic thin film as a mask in x‐ray lithography. A 2‐μthick Pb‐Sn eutectic film was directionally solidified on a mica substrate to produce a mask with a minimum linewidth of 0.7 μ. The structure was replicated with contact x‐ray lithography. Applications and the ultimate limitation of this process are discussed.Keywords
This publication has 3 references indexed in Scilit:
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- Effects of dislocations in silicon transistors with implanted emittersSolid-State Electronics, 1979
- Soft X-ray microscopy and lithography with synchrotron radiationNuclear Instruments and Methods, 1978