Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells
- 1 December 1986
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 41 (4), 275-283
- https://doi.org/10.1007/bf00616049
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electron spin resonance (ESR and LESR) studies in a-Si1−xGex:HJournal of Non-Crystalline Solids, 1985
- Stability of a-Si:H solar cells observed with spectral responseJournal of Non-Crystalline Solids, 1985
- Light-induced effects in amorphous silicon alloys - Design of solar cells with improved stabilityJournal of Non-Crystalline Solids, 1985
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- High Performance A–Si Solar Cells and Narrow Bandgap MaterialsMRS Proceedings, 1985
- An SCLC model including diffusionJournal of Non-Crystalline Solids, 1983
- Field Effect in a‐Si:H Films. Influence of Annealing and Light ExposurePhysica Status Solidi (b), 1982
- An exact evaluation of steady-state space-charge-limited currents for arbitrary trap distributionsPhysica Status Solidi (a), 1981
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Zum Mechanismus des lichtelektrischen Prim rstromes in isolierenden KristallenThe European Physical Journal A, 1932