Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon

Abstract

Behavior of electrically active nickel which acts as an acceptor in silicon is studied. Energy level of 0.41±0.01 eV below the conduction band at about 330°K, which includes the effect of the statistical weight factor, solubility of N _S °=10²⁶exp [-(3.1±0.2)/k T] cm^-3 and reciprocal product of time constant of annealing of supersaturated state by dislocation density of 1/τn _d =1.3×10^-2exp [-(1.4±0.2)/k T] cm² sec^-1 have been obtained by Hall coefficient and resistivity measurements. It is concluded that the electrically active nickel atoms occupy the substitutional sites and nickel diffuses dissociatively and that the self-diffusion constant of silicon is 30exp [-(4.5±0.4)/k T] cm² sec^-1.