An Assessment of a-SiGe:H Alloys with a Band GaP of 1.5Ev as to their Suitability for Solar Cell Applications

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1 January 1985

journal article
Published by Springer Nature in MRS Proceedings

Vol. 49
https://doi.org/10.1557/proc-49-167

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Structural, electrical, and optical properties of a- ${Si}_{1 - x}$ ${Ge}_{x}$ :H and an inferred electronic band structure
Physical Review B, 1985
Material properties of glow-discharge a-SiSn:H alloys
Journal of Non-Crystalline Solids, 1984
Excess dark currents in a-Si:H P-I-N devices
Journal of Non-Crystalline Solids, 1984
Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
Physical Review B, 1982
Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density
Physical Review Letters, 1981

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