Carrier transport at grain boundaries in semiconductors
- 15 November 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (10), 2605-2631
- https://doi.org/10.1063/1.333793
Abstract
No abstract availableKeywords
This publication has 83 references indexed in Scilit:
- PLhenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illuminationSolid-State Electronics, 1982
- The field effect electron mobility of laser-annealed polycrystalline silicon MOSFETsSolid-State Electronics, 1981
- Electrical effects of clustered defects in heteroepitaxial Si filmsSolid-State Electronics, 1973
- Leakage currents of n+p silicon diodes with different amounts of dislocationsSolid-State Electronics, 1969
- Germanium bicrystal photoresponse—IISolid-State Electronics, 1964
- Germanium bicrystal photoresponse—ISolid-State Electronics, 1964
- Models of grain boundaries in the diamond lattice I. Tilt about I 10Physica, 1959
- Oriented growth and definition of medium angle semiconductor bicrystalsThe European Physical Journal A, 1957
- Zum elektrischen Verhalten von BikristallzwischenschichtenThe European Physical Journal A, 1956
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955