Simple approach to self-energy corrections in semiconductors and insulators

Abstract

We have used the Sterne-Inkson [P. A. Sterne and J. C. Inkson, J. Phys. C 17, 1497 (1984)] extreme tight-binding model for the self-energy corrections to the top of the valence band and bottom of the conduction band within the GW approximation. Application of these corrections to both exchange-only local-density-approximation (LDA) calculations and the LDA with Ceperley-Alder correlation calculations for five materials C, Si, Ge, GaAs, and ZnSe has been found to result in good agreement with experimental data and recent theoretical results. The LDA calculations were performed by using the plane-wave-basis and norm-conserving pseudopotentials.