Oxide/Metal Interface Distance and Epitaxial Strain in theSystem
- 23 July 2003
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 91 (4), 046101
- https://doi.org/10.1103/physrevlett.91.046101
Abstract
Geometric parameters of NiO films epitaxially grown on Ag(001) were determined using two independent experimental techniques and ab initio simulations. Primary beam diffraction modulated electron emission experiments determined that the NiO films grow with O on top of Ag and that the oxide/metal interface distance is d=2.3+/-0.1 A. Polarization-dependent x-ray absorption, at the Ni-K edge, determined the tetragonal strain (r( parallel )=2.046+/-0.009 A, r( perpendicular )=2.12+/-0.02 A) and d=2.37+/-0.05 A. Periodic slab model results agree with the experiments (d=2.40, r( parallel )=2.07, r( perpendicular )=2.10 A; the O-on-top configuration is the most stable).Keywords
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