Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices
- 24 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (4), 409-411
- https://doi.org/10.1063/1.125770
Abstract
We describe the molecular-beam epitaxygrowth, as well as both the structural and optical characterization of a set of InAs/GaSb type-II strained-layer superlattice samples, in which the GaSb layer thickness is systematically increased. Absorbance spectroscopy measurements show well-defined features associated with transitions from the various valence subbands to the lowest conduction subband, and also a significant blueshift of the band edge when the GaSb layers thickness is increased. Empirical pseudopotential method calculations are shown to successfully predict the blueshift and help identify the higher-energy transitions.Keywords
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