Hall Effect

Abstract

The Hall effect is one of the rich sources of information about the conduction properties of semiconductors. The mobility and carrier concentration can be obtained from the Hall constant in conjunction with the resistivity; this cannot be done with the resistivity alone. The mobility is pertinent to the understanding of transistors since such things as high-frequency cut-off and the intrinsic current gain of the transistor are related to this property of germanium. The Hall effect and associated thermomagnetic and galvanomagnetic (Ettingshausen, Nernst, Righi-Leduc, and Ohmic) effects are discussed. The elimination of the effect of associated phenomena from the Hall measurement can be achieved in several ways. Some of the methods which are used today in the study of germanium are discussed, and typical apparatus is described.