Orientation and Temperature Effects on the Electrical Resistivity of High-Purity Magnesium

Abstract

The effect of crystal orientation on the electrical resistivity of high‐purity magnesium at 24°C may be represented by the equation: $$\text{ρ(φ)=4.60−0.75}{\cos }^2\mathrm{\phi ,\hspace{0.17em}(}{\mathrm{in\; microhms/cm}}^3)$$ , where θ is the angle between the hexagonal axis and the direction of current flow. The effect of temperature on the electrical resistivity for varying orientations shows temperature coefficients of 0.00390 and 0.00408/°C obtained perpendicular and parallel to the hexagonal axis, respectively, for the temperature range of 24° to 200°C. Magnesium shows rotational symmetry about the hexagonal axis with respect to electrical resistivity. Grain size has little or no effect on the electrical resistivity of magnesium.